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02/23/12 IRFTS8342PBF hexfet power mosfet notes through are on page 2 features and benefits www.irf.com 1 applications ???
tsop-6 absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v a w c max. 8.2 6.6 80 20 30 -55 to + 150 2.0 0.02 1.3 v ds 30 v v gs 20 v r ds(on) max (@v gs = 10v) 19 m ? r ds(on) max (@v gs = 4.5v) 29 m ? q g (typical) 4.8 nc i d (@t a = 25c) 8.2 a note form quantity irfts8342trpbf tsop-6 tape and reel 3000 orderable part number package type standard pack features resulting benefits industry-standard tsop-6 package multi-vendor compatibility rohs compliant containing no lead, no bromide and no halogen ?

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. pulse width ? 400 s; duty cycle ? 2%. when mounted on 1 ich square copper board. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ?? v dss / ? t j breakdown voltage temp. coefficient ??? 18 ??? mv/c r ds(on) ??? 15 19 ??? 22 29 v gs(th) gate threshold voltage 1.35 1.80 2.35 v v ds = v gs , i d = 25 a ? v gs(th) gate threshold voltage coefficient ??? -5.7 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 12 ??? ??? s q g total gate charge ??? 4.8 ??? q gs gate-to-source charge ??? 2.1 ??? q gd gate-to-drain charge ??? 1.6 ??? r g gate resistance ??? 2.6 ??? ? t d(on) turn-on delay time ??? 7.3 ??? t r rise time ???15??? t d(off) turn-off delay time ??? 9.1 ??? t f fall time ??? 8.2 ??? c iss input capacitance ??? 560 ??? c oss output capacitance ??? 102 ??? c rss reverse transfer capacitance ??? 48 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 8.2 12 ns q rr reverse recovery charge ??? 4.5 5.4 nc thermal resistance parameter units r ? c/w conditions ? = 1.0mhz v gs = 0v v ds = 25v v ds = 24v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 8.2a v gs = 4.5v, i d = 6.6a m ? a t j = 25c, i f = 6.6a, v dd = 24v di/dt = 100/ s t j = 25c, i s = 6.6a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol i d = 6.6a r g = 6.8 ? v ds = 10v, i d = 6.6a v ds = 24v, v gs = 0v, t j = 125c v dd = 15v, v gs = 4.5v i d = 6.6.a v ds = 15v v gs = 20v v gs = -20v v gs = 4.5v ns pf static drain-to-source on-resistance a ??? ??? ??? ??? 2.5 80 na nc max. 62.5 typ. ???

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.01 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 8.0v 7.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v ? 60 s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v ? 60 s pulse width tj = 150c vgs top 10v 8.0v 7.0v 4.5v 3.5v 3.0v 2.75v bottom 2.5v 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v ? 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.2a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 02468101214 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 6.6a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 8. maximum safe operating area fig 9. maximum drain current vs. ambient temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a i d = 250 a i d = 1.0ma 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a 0.01 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 15. typical power vs. time fig 14. maximum avalanche energy vs. drain current fig 16. for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period !
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0 5 10 15 20 v gs, gate -to -source voltage (v) 10 15 20 25 30 35 40 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 8.2a t j = 25c t j = 125c 0 10 20 30 40 50 60 70 80 i d , drain current (a) 10 20 30 40 50 60 70 80 90 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) vgs = 10v vgs = 4.5v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 70 80 90 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.96a 1.5a bottom 6.6a 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 s i n g l e p u l s e p o w e r ( w )

6 www.irf.com fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 19a. switching time test circuit fig 19b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. gate charge test circuit fig 17b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( ???? ) $
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8 www.irf.com ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012 data and specifications subject to change without notice. qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes tsop-6 qualification information ? moisture sensitivity level qualification level cons umer ?? (per je dec jes d47f ??? guidelines )

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